? 2009 ixys corporation, all rights reserved ds99029d(06/09) v dss = 600v i d25 = 70a r ds(on) 88m t rr 250ns n-channel enhancement mode avalanche rated, low q g , low intrinsic r g high dv/dt, low t rr symbol test conditions maximum ratings v dss t j = 25 c to 150 c 600 v v dgr t j = 25 c to 150 c, r gs = 1m 600 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c 70 a i dm t c = 25 c, pulse width limited by t jm 280 a i a t c = 25 c 70 a e as t c = 25 c 5 j dv/dt i s i dm , v dd v dss , t j 150 c 20 v/ns p d t c = 25 c 890 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c v isol 50/60hz, rms t = 1min 2500 v~ i isol 1ma t = 1s 3000 v~ m d mounting torque 1.5/13 nm/lb.in. terminal connection torque 1.3/11.5 nm/lb.in. weight 30 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 1ma 600 v v gs(th) v ds = v gs , i d = 8ma 3.0 5.5 v i gss v gs = 30v, v ds = 0v 200 na i dss v ds = v dss , v gs = 0v 50 a t j = 125 c 3 ma r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 88 m hiperfet tm power mosfet q2-class IXFN70N60Q2 s g s d minibloc, sot-227 b e153432 g = gate d = drain s = source either source terminal at minibloc can be used as main or kelvin source features z double metal process for low gate resistance z minibloc, with aluminium nitride isolation z avalanche rated z low package inductance z fast intrinsic rectifier applications z dc-dc converters z switched-mode and resonant-mode power supplies z dc choppers z pulse generators advantages z easy to mount z space savings z high power density
ixys reserves the right to change limits, test conditions, and dimensions. IXFN70N60Q2 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 36 50 s c iss 12 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 1340 pf c rss 345 pf t d(on) 26 ns t r 25 ns t d(off) 60 ns t f 12 ns q g(on) 265 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 57 nc q gd 120 nc r thjc 0.14 c /w r thcs 0.05 c /w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 70 a i sm repetitive, pulse width limited by t jm 280 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 250 ns q rm 1.2 c i rm 8.0 a notes1: pulse test, t 300 s; duty cycle, d 2%. sot-227b outline ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 i f = 25a, -di/dt = 100a/ s v r = 100v, v gs = 0v ordering information the IXFN70N60Q2 is also available with brass capture nuts in place of the normal zinc coated steel capture nuts. the ordering part number is IXFN70N60Q2-bn. resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 35a r g = 1 (external)
? 2009 ixys corporation, all rights reserved IXFN70N60Q2 fig. 2. extended output characteristics @ 25oc 0 20 40 60 80 10 0 12 0 14 0 02468101214161820 v ds - volts i d - amperes v gs = 1 0v 5v 7v 6v fig. 3. output characteristics @ 125oc 0 10 20 30 40 50 60 70 0246810121416 v ds - volts i d - amperes v gs = 1 0v 7v 5v 6v fig. 1. output characteristics @ 25oc 0 10 20 30 40 50 60 70 01234567 v ds - volts i d - amperes v gs = 1 0v 7v 6v 5v fig. 4. r ds(on) normalized to 0.5 i d25 val u e vs. junction temperature 0.2 0.6 1. 0 1. 4 1. 8 2.2 2.6 3.0 -50-25 0 25 50 75 100125150 t j - degrees centigrade r d s (on) - normalized i d = 70a i d = 35a v gs = 1 0v fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 70 80 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) normalized to 0.5 i d25 value vs. i d 0.6 0.8 1. 0 1. 2 1. 4 1. 6 1. 8 2.0 2.2 2.4 2.6 2.8 0 20406080100120140 i d - amperes r d s (on) - normalized t j = 1 25 o c t j = 25 o c v gs = 1 0v
ixys reserves the right to change limits, test conditions, and dimensions. IXFN70N60Q2 fig. 11. capacitance 10 0 1000 10000 100000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - pf c iss c oss c rss f = 1 mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 40 80 120 160 200 240 280 q g - nanocoulombs v g s - volts v d s = 300v i d = 35a i g = 1 0ma fig. 7. input admittance 0 10 20 30 40 50 60 70 80 90 10 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 v gs - volts i d - amperes t j = 1 25 o c 25 o c - 40 o c fig. 8. transconductance 0 10 20 30 40 50 60 70 80 90 10 0 0 102030405060708090100 i d - amperes g f s - siemens t j = - 40 o c 25 o c 1 2 5 o c fig. 9. source current vs. source-to-drain vo l tag e 0 20 40 60 80 10 0 12 0 14 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 v sd - volts i s - amperes t j = 25 o c t j = 1 25 o c fig. 12. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w ixys ref: f _70n60q2(95)5-28-08-a
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